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本期内容
2024年12/2025年1月刊
封面故事 Cover Story
集成光子平台 : 
SiC的案例
Integrated photonic platforms:The case for SiC
丹麦技术大学的Haiyan Ou
编者话 Editorial
SiC功率器件�？榉庾凹际�: 
超级英雄的战衣
SiC Power Device Module Packaging Technology: The Superhero's Battle Suit
陆敏
业界动态 Industry
天科合达8英寸SiC衬底二期项目开工
Tankblue's 8-inch SiC substrate phase II project has commenced construction
SEMI中国化合物半导体标准技术委员会2024冬季会议在无锡顺利召开
The SEMI China Compound Semiconductor Standard Technology Committee's 2024 Winter Meeting was successfully held in Wuxi
随着首席执行官的卸任，Wolfspeed将发生巨大变化
All change at Wolfspeed as CEO steps down
总投资超200亿，长飞先进武汉基地SiC项目首批设备搬入
The total investment exceeds 20 billion yuan, and the first batch of equipment for Changfei Advanced's Wuhan base SiC project has been moved in.
GaN和SiC“首次”用于数据中心PSU
GaN and SiC 'first' for data centre PSU
安世半导体与KOSTAL就车规级宽禁带器件展开合作
Nexperia and KOSTAL partner on automotive-grade wide-bandgap devices
X-FAB与SMART Photonics就微印刷展开合作
X-FAB and SMART Photonics partner on micro-printing
西门子推出基于SiC的电子启动器
Siemens launches SiC-based e-Starter
技术 Technology
块状AlN的有效扩大
Efficient enlargement of bulk AlN
Carsten Hartmann和Thomas Straubinger，莱布尼茨晶体生长技术研究所
氮化物的近室温外延技术
The near room temperature epitaxy of nitrides
吕文来，王艳会，林茹，谢斌平，费勉仪器科技（上海）有限公司
当失败不再是一种选择
When failure isn't an option
Nick Mcneal、Thyag Sadasiwan和Pragati Verma,Greene Tweed
III族氮化物场致发射真空晶体管
III-Nitride field-emission vacuum transistors
Pao-Chuan Shih和Tomás Palacios，麻省理工学院
科技前沿 Research Review
在SOI上打印高速调制器
Printing high-speed modulators on SOI
调整GaN MOSFET的导通电阻
Trimming the on-resistance of GaN MOSFETs
垂直范德瓦尔斯集成p-W0.09Re0.91S2/GaN异质结用于超高探 测率紫外图像传感
Vertical van der Waals Integrated p-W0.09Re0.91S2/GaN Heterojunction for Ultra-High Detectivity UV Image Sensing
九峰山实验室专栏 JFS Laboratory Column
高性能硅基集成无源器件技术
High-performance silicon-based integrated passive device technology
吴畅，刘捷龙，刘安，郭涛，吴佳燕，王凯，曾宇磊，王瑜，李张涛，熊鑫，周瑞，何琦，邢绍琨，刘钊，黄镇，丁琪超，九峰山实验室
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