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Producing high-quality hexagonal BN
- BOHDAN SADOVYI, PETRO SADOVYI, SYLWESTER POROWSKI AND IZABELLA GRZEGORY£¬²¨À¼¿ÆÑ§Ôº¸ßѹÎïÀíÑо¿Ëù£» ANDRII NIKOLENKO £¬ÎÚ¿ËÀ¼¿ÆÑ§Ôº°ëµ¼ÌåÎïÀíÑо¿Ëù
±àÕß»° Editorial
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The Progress of Silicon Carbide Power Devices Technology and Industrialization
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Òµ½ç¶¯Ì¬ Industry
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Total investment exceeds 20 billion, with the main building of YASC Wuhan base fully topped out.
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World Advanced and Hanleigh join forces to build a 8-inch SiC production line.
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Wolfspeed reports Q4 and full year results
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New breakthrough | Gallium Ren Semiconductor successfully develops ultra-thin 6-inch gallium oxide substrates.
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Onsemi releases upgraded solar power modules
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Great Wall Motor's "Third-Generation Semiconductor Module Packaging and Testing Project" is completed.
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The substrate factory of Chongqing San'an project has completed the lighting and commissioning of the production line.
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Research on Hafnium Oxide-Based Ferroelectric Materials and Their Storage and Computing Chips
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¿Æ¼¼Ç°ÑØ Research Review
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Advancing the InGaAs MOSFET
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Taking the power of the InP PCSEL to new highs
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PCSELs produce green emission
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What does the future hold for the compound semiconductor industry?
- ALI JAFFAL, TAHA AYARI AND AYMEN GHORBEL£¬YOLE¹«Ë¾
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GaN RF transistors 2.0?
- Stacia KellerºÍUmesh Mishra£¬¼ÓÖÝ´óѧʥ°Í°ÍÀ­·ÖУ
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Giving gallium oxide avalanche capability
- Feng Zhou1 £¬Jiandong Ye1 ºÍYuhao Zhang2 (1.ÄϾ©´óѧ£¬2.¸¥¼ªÄáÑÇÀí¹¤´óѧ)
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Pushing the power envelope
- Richard Stevenson£¬¡¶CS¡·ÔÓÖ¾
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Typical Failure Analysis of Compound Semiconductor Devices
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