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本期内容
2024年 6/7 月刊
封面故事 Cover Story
应用AlN的极端温度器件
Extreme-temperature devices using AlN
编者话 Editorial
硅光子集成芯片技术和产业化进展
Progress in Silicon Photonics Integrated Chip Technology and Industrialization
业界动态 Industry
2024半导体先进技术创新发展和机遇大会圆满收官！千人盛会“燃”爆全场，60+重要报告，首发最新技术成果！
VECSEL是迈向量子互联网的一步
VECSELS are a step towards the quantum Internet
ST宣布50亿欧元在意新建8英寸SiC工厂
ST announces a new 8-inch SiC factory in Italy with an investment of 5 billion euros
英飞凌德国功率半导体工厂最终建设许可获批，投资50亿欧元
Infineon's German power semiconductor factory has finally received construction permission, with an investment of 5 billion euros
三菱电机熊本SiC晶圆厂将提前5个月投运
Mitsubishi Electric's Kumamoto SiC wafer factory will be put into operation five months ahead of schedule
NCT生长出6英寸氧化镓晶体
NCT grows 6-inch gallium oxide crystal
麻省理工学院和PhotonDelta发布PIC路线图
MIT and PhotonDelta announce PIC roadmap
宽禁带半导体国家工程研究中心专栏 WBS Column
超宽禁带半导体材料与器件研究进展
Research Progress on Ultra-Wide Bandgap Semiconductor Materials and Devices
科技前沿 Research Review
GaN VCSELs: 
生产流程的精细化
GaN VCSELs: Refining the production process
在N极性GaN上实现低接触电阻
Realising a low contact resistance on N-polar GaN
Ga2O3: 
提高栅极介电性能
Ga2O3: Improving the gate dielectric
技术 Technology
如何整合硅和III-V族
How to integrate silicon and III-Vs
双势垒阳极结构实现0.36 V导通电压时10 kV击穿电压的横向GaN肖特基 势垒二极管
A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure
扩展5G和6G的III-V技术
Scaling III-V technologies for 5G and 6G
MBE: 
改变硅基氮化镓射频的游戏规则
MBE: A game changer for GaN-on-silicon RF
九峰山实验室专栏 JFS Laboratory Column
氧化镓材料综述
Overview of Gallium Oxide Materials
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