本期内容
2023年12/2024年1月刊
封面故事 Cover Story
微射流激光技术基于大尺寸金刚石材料分片的研究
Microjet laser technology based on large size diamond material fragmentation research
编者话 Editorial
AI助力化合物半导体行业新发展
AI is driving new developments in the compound semiconductor industry
业界动态 Industry
奋楫扬帆，破浪笃行！化合物半导体先进技术及应用大会在太仓盛大召开，圆满落幕！
Compound Semiconductor Advanced Technology and Application Conference was held in Taicang and ended successfully!
BelGaN开始提供第二代650V eGaN样品，展示1200V eHEMT硅基氮化镓技术
BelGaN starts sampling of its second Generation 650V eGaN platform, and demonstrates 1200V eHEMT GaN-on-Si technology
冲电气在信越化学的QST衬底上开发出GaN剥离/键合技术
OKI develops GaN lifting-off/bonding technology on Shin-Etsu's QST substrates
Diamond Foundry制造出首个100mm单晶金刚石晶圆
Diamond Foundry creates first 100mm single-crystal diamond wafer
氮化镓和碳化硅对人工智能的规模和潜力至关重要
Gallium nitride and silicon carbide to be essential for enabling scale and potential of AI
九峰山实验室着力破解太赫兹器件频率瓶颈
Jiufengshan Laboratory strives to crack the frequency bottleneck of terahertz devices
罗姆完成对SiC生产基地的收购
Rohm completes acquisition of SiC site
宽禁带半导体国家工程研究中心专栏 WBS Column
科技前沿 Research Review
改进氮化镓衬底减薄技术
Refining GaN substrate thinning
基于自对准Mesa终端成功制备了高性能PtOx/β-Ga2O3 SBD器件
High performance vertical PtOx/β-Ga2O3 schottky barrier diodes with self-aligned mesa termination
β-Ga2O3器件的液体雾化外延法
Mist epitaxy of β-Ga2O3 devices
技术 Technology
先进封装之于化合物半导体——大有用武之地
Advanced packaging is very useful for compound semiconductors
基于晶圆级高导热异质集成衬底的氧化镓射频晶体管
Wafer-scaled Heterointegrated Ga2O3-on-SiC Radio Frequency Transistors
Micro-LED技术研究进展
Research progress of Micro-LED technology
通过氧气等离子体处理的超低导通电压（0.37V）垂直GaN-on-GaN肖 特基势垒二极管
Ultra-low turn-on voltage (0.37V) vertical GaN-on-GaN Schottky barrier diode via oxygen plasma treatment
半绝缘半导体电阻率、迁移率和载流子浓度的非接触测量
The non-contact measurement of Resistivity, mobility and carrier concentration of semi-insulated semiconductors
九峰山实验室专栏 JFS Laboratory Column
异质集成核心工艺晶圆键合综述
A review of wafer bonding process for heterogeneous integration
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粤公网安备 44030402004706号
本研究使用微射流激光技术对单晶金刚石晶体进行切片加工，当耦合功率达到20W能量时，金刚石表面材料达到等离子态，在水层约束下， 等离子体诱导反冲压力，提升材料等离子化效率，进一步加快材料去除速率。通过引入金刚石烧蚀阈值分析、材料表征测试、缺陷测试分析，对缺陷的分布、界面处的界面态密度在金刚石禁带中的能级位置和浓度、表面形貌、粗糙度、缺陷类型和表现形式等微观特征进行定量研究，揭示微射流激光技术在单晶金刚石切片加工过程中的材料去除机理。