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本期内容
2023年10/11 月刊
封面故事 Cover Story
在氧化镓蚀刻方面表现突出
Excelling In The Etching Of Gallium Oxide
编者话 Editorial
深紫外LED技术和产业化进展
The progress of UVC-LED technology and industrialization
业界动态 Industry
Crystal IS宣布推出首款4英寸AlN衬底
Crystal IS announces first 4-inch AlN substrate
Wolfspeed将射频业务出售给Macom
Wolfspeed to sell RF business to Macom
金刚石p型横向SBD取得突破
Breakthrough in diamond p-type lateral SBDs
Transphorm的GaN器件达到短路里程碑
Transphorm's GaN meets short circuit milestone
信越化学推进QST衬底业务
Shin-Etsu Chemical promotes QST substrate business
长电科技: 
公司封装的第三代半导体器件已经应用于汽车领域
Jcet: The third generation of semiconductor devices packaged by the company have been used in the automotive field
碳化硅领域又一起收购！
Another acquisition in Silicon carbide field!
宽禁带半导体国家工程研究中心专栏 WBS Column
科技前沿 Research Review
采用块状AlN可使FET性能更佳
Better FETs with bulk AlN
对非辐射机制的新见解
A new insight into non-radiative mechanisms
推进琥珀色microLED的发展
Advancing amber microLEDs
技术 Technology
消除应用GaN的障碍
Banishing Barriers To GaN Adoption
制造性能更好的蓝色和绿色激光器
Building better blue and green lasers
拓展深紫外 LED 的应用领域
Expanding horizons for deep-UV LEDs
简化 SiC 衬底生产
Streamlining SiC substrate production
射频声学滤波器技术的发展趋势
The Trend of Radio-Frequency Acoustic Filter Technology
九峰山实验室专栏 JFS Laboratory Column
化合物半导体材料的表征分析
characterization of compound semiconductor materials
广告索引 Advertisement Index
广告索引
Advertisement Index