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本期内容
2023年8/9 月刊
封面故事 Cover Story
首次实现超宽禁带氧化镓功率器件 强雪崩 - 浪涌鲁棒性
The strong avalanche surge robustness of ultra-wide bandgap gallium oxide power devices is achieved for the first time
编者话 Editorial
Micro-LED 技术和产业化进展
The progress of Micro-LED technology and industrialization
业界动态 Industry
WIN推出新一代毫米波GaAs技术
WIN announces next gen mmWave GaAs tech
BelGaN 650V eGaN工艺技术正式量产
BelGaN 650V eGaN process technology is officially mass-produced
意法半导体开始量产PowerGaN芯片
ST starts volume production of PowerGaN chips
英飞凌将在马来西亚居林建造全球最大的200mm碳化硅功率半导体工厂
Infineon to build the world’s largest 200-millimeter SiC Power Fab in Kulim, Malaysia
中国将对化合物半导体材料实施出口管制
China to put export controls on compound semi materials
GaN Systems 与上海安世博能源科技结盟 推进氮化镓进入中国电动车应 用市场
GaN Systems and ACEpower Partner to Propel GaN Adoption in Chinese Electric Vehicle Market
美国能源部发布《2023年关键材料评估》报告
The US Department of Energy released the Critical Materials Assessment 2023 report
宽禁带半导体国家工程研究中心专栏 WBS Column
技术 Technology
SiC MOSFET 驱动负压关断的典型电路
Typical circuit for SiC MOSFETs to drive negative voltage turn-off
碳化硅同质外延层厚度无损红外反射光谱法分析
Nondestructive infrared reflectance spectroscopy for the thickness of SiC homogeneous epitaxial layer
国家的财富: 
英国的国家外延设施
A national treasure: The UK’s central growth facility
拥护真正的重量级材料: 
释放Ga2O3的希望
Championing a true heavyweight：Unleashing the promise of Ga2O3
辉煌的栅极氧化物
The glorious gate oxide
科技前沿 Research Review
常关型Ga2O3晶体管取得进展
Making headway with normally-off Ga2O3 transistors
HEMT: 
优化架构
HEMTs: Optimising the architecture
KAUST团队发明第一个β-Ga2O3 虚拟CMOS集成电路
The KAUST team invents the first β-Ga2O3 virtual CMOS integrated circuit
九峰山实验室专栏 JFS Laboratory Column
下一代碳化硅沟槽器件技术
Next generation silicon carbide groove device technology
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