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本期内容
2022年10/11月刊
封面故事 Cover Story
基于转印的高性能垂直Micro-LED微显示器
Transfer Printed, Vertical GaN-on-Silicon Micro-LED Arrays
编者话 Editorial
第三代半导体材料之氮化镓衬底
Gallium nitride substrate as a third - generation semiconductor materials
Wolfspeed专栏 Wolfspeed Column
Wolfspeed扩展AEC-Q101车规级碳化硅MOSFET，推出650 V E3M系列产品
650 V Silicon Carbide MOSFETs Extend Wolfspeed's AEC-Q101 Qualified E3M Range
业界动态 Industry
InP的下一站: 
消费电子应用？
Next stop for InP: consumer applications?
IQE宣布与SK Siltron展开合作
IQE Announces Collaboration With SK Siltron
安森美扩建欧洲SiC工厂
Onsemi Expands European SiC Fab
英诺赛科在比利时“GaN谷”开设欧洲研发中心
Innoscience Opens European R&D Centre In Belgium's 'GaN Valley'
HexaTech投资100mm AlN衬底项目
HexaTech Invests In 100mm AlN Substrate Program
MRSI Systems，迈康尼集团宣布与 Lumentum 达成新合作，将为汽车 行业提供创新的激光雷达解决方案
MRSI Systems, Mycronic Group Announces New Partnership with Lumentum to Provide Innovative LiDAR Solutions for the Automotive Industry
Aixtron推出下一代 8英寸SiC 外延系统
Aixtron Launches Next Gen SiC Epitaxy System for 200 mm
宽禁带半导体国家工程研究中心专栏 WBS Column
科技前沿 Research Review
蒸汽退火增强InP HEMT性能
Steam annealing enhances the InP HEMT
紫外线激光器实现连续激射
UVC laser delivers continuous emission
共掺杂有望实现超高效的白色Ga2O3 LEDs
Co-doping promises ultra-efficient white Ga2O3 LEDs
技术 Technology
用多孔GaN基microLEDs简化显示器
Simplifying displays with porous GaN microLEDs
利用3D单像素成像技术监测甲烷
Monitoring methane with 3D single-pixel imaging
让PICs腾飞
Getting PICs off the ground
将透明导电氧化物引入深紫外
Taking transparent conducting oxides into the deep UV
九峰山实验室专栏 JFS Laboratory Column
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