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本期内容
2022年2/3月刊
封面故事 Cover Story
碳化硅�？榈母呶路庾耙殉汕魇�
High temperature packaging of silicon carbide modules has become a trend
编者话 Editorial
超宽禁带半导体之Ga2O3
Ga2O3 of Ultra Wide Bandgap Semiconductors
业界动态 Industry
纳微成立全球首个电动汽车 GaN芯片设计中心
Navitas Opens World's First EV GaN Chip Design Centre
博世批准量产 SiC 芯片
Bosch Gives Go-ahead For Volume Production Of SiC Chips
II-VI的SiC MOSFET获得了车规认证，扩展了与通用电气的合作关系
II-VI Qualifies SiC MOSFETs For Cars And Extends GE Relationship
中国GaN公司英诺赛科走向国际
Chinese GaN Firm Innoscience Goes International
InGaN 红光LEDs外延温度提升
Epitaxial temperature increase of InGaN red LEDs
ST 推出第三代碳化硅功率芯片
ST launches the third generation of silicon carbide power chips
宽禁带半导体国家工程研究中心专栏 WBS Column
高端访谈 Top interview
II-VI: 第一个领导者的里程碑
II-VI: Milestones of its first leader
回顾2021，展望2022
Looking back on 2021, looking forward to 2022
科技前沿 Research Review
HVPE制备垂直GaN p-n二极管
HVPE yields vertical GaN p-n diodes
用金刚石层解决氧化镓导电性差的问题
Tackling gallium oxide's poor conductivity with diamond layers
GaN HEMT与 SiC SBD的集成原型单芯片
Single Chip Integrated Prototype of GaN HEMT and SiC SBD
技术 Technology
最佳鸡尾酒
Optimal cocktails
在硅上构建III-V族化合物半导体纳米脊型光电探测器
Constructing III-V nano-ridge photodetectors on silicon
九峰山实验室专栏 JFS Laboratory Column
广告索引 Advertisement Index
广告索引
AD Index