本期内容
2021年06/07月刊
封面故事 Cover Story
自对准生长产生混合光子器件
Self-aligned growth spawns hybrid photonic devices
编者话 Editorial
宽禁带半导体技术标准化概况
General Situation of Wide Bandgap Semiconductor Technology
业界动态 Industry
2021CSC化合物半导体先进应用大会（苏州）成功举办
2021CSC Compound Semiconductor Advanced Application Conference (Suzhou) was successfully held
10000V！氮化镓功率器件击穿电压新纪录
10000V! New record for breakdown voltage of GaN power devices
Novel Crystal Technology全球首次量产4英寸“氧化镓”晶圆
Novel Crystal Technology's first mass production of 4-inch "gallium oxide" wafers in the world
安森美半导体推出全碳化硅MOSFET�？榻饩龇桨�！用于电动汽车充电
ON Semiconductor launches all silicon carbide MOSFET module solutions! For charging electric vehicles
中国第三代半导体传来最强音
The strongest sound from China's third-generation semiconductor
科锐携手高斯宝，为服务器电源市场带来SiC解决方案
Cree joins hands with Gospel to bring SiC solutions to the server power market
半绝缘SiC衬底全球第三，山东天岳科创板IPO获受理
SICC Innovation Board was accepted for IPO, and the semi-insulating SiC substrate market accounted for the third largest share in the world.
宽禁带半导体国家工程研究中心专栏 WBS Column
高端访谈 Top interview
安森美半导体助力汽车电动化和智能化发展
ON Semiconductor contributes to the development of automotive electrification and intelligence
市场分析 Market analysis
GaN射频器件:
GaN-on-SiC，还是 GaN-on-Si？
GaN for RF electronics: GaN-onSiC vs GaN-on-Si?
科技前沿 Research Review
氮化镓场效应晶体管沟道性能提升
Turbo-charging the channel of the GaN MOSFET
消除SiC MOSFET中的界面
Quashing interface states in SiC MOSFETs
揭示绿光LED的退化机制
Uncovering degradation mechanisms in green LEDs
技术 Technology
Aledia进军microLED显示器市场
Aledia closes in on microLED displays market
数字信号处理技术助力光通信能力
Turbo-charging transmission with digital signal processing
为5G提供更好的GaN
Giving 5G better GaN
用高压氮化镓HEMTs颠覆电子管市场
Disrupting the tubes market with high-voltage GaN HEMTs
九峰山实验室专栏 JFS Laboratory Column
广告索引 Advertisement Index
广告索引
Advertisement Index
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硅微电子取得了惊人的进步。最新的组件面积仅为几十平方纳米，消耗的功率很小，并 且将数十亿个封装在一块芯片上。今天的技术是几十年来硅CMOS工艺开发的顶峰，也 催生了使硅光子学受益的技术进步。晶圆厂现在可以生产低损耗的硅波导和无源结构， 将光信号传送到芯片上。但是，这项技术并不完美�？梢运邓畲蟮娜醯闶侨狈庋г� 益，这源于硅的间接带隙。